Invention Grant
- Patent Title: Accessing memory using fractional reference voltages
- Patent Title (中): 使用分数参考电压访问存储器
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Application No.: US12535987Application Date: 2009-08-05
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Publication No.: US08406048B2Publication Date: 2013-03-26
- Inventor: Xueshi Yang , Zining Wu
- Applicant: Xueshi Yang , Zining Wu
- Applicant Address: BB
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Devices, systems, methods, and other embodiments associated with accessing memory using fractional reference voltage are described. In one embodiment, an apparatus includes comparison logic. The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results. The apparatus includes read logic to determine a bit value of the memory cell based, at least in part, on the comparison results.
Public/Granted literature
- US20100034018A1 ACCESSING MEMORY USING FRACTIONAL REFERENCE VOLTAGES Public/Granted day:2010-02-11
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