Invention Grant
US08406054B2 Semiconductor memory device with improved ECC efficiency 有权
具有提高ECC效率的半导体存储器件

Semiconductor memory device with improved ECC efficiency
Abstract:
Memory cells store k bits of data (k is a natural number not less than 2) into a single cell. A number n of data storage circuits store externally supplied k bits of data to write data into the memory cells. A control circuit inputs the data on a first page, a second page, . . . , a k-th page to every h (h≦n) of the data storage circuits and then writes the data in the n data storage circuits into the memory cells.
Public/Granted literature
Information query
Patent Agency Ranking
0/0