Invention Grant
US08406057B2 Nonvolatile semiconductor storage device 有权
非易失性半导体存储器件

Nonvolatile semiconductor storage device
Abstract:
According to one embodiment, a semiconductor storage device includes a memory string, a bit line, a sense simplifier, a first MOS, a first charging-circuit, a second-charging circuit, and a controller. The memory string includes memory cells. The bit line is connected to the memory cell. The sense amplifier applies a voltage to the bit line. The first MOS is electrically connected between the sense amplifier and bit line. The first charging circuit has a first current supply capacity and transfers a first current. The second charging-circuit has a second current supply capacity. The controller controls a first timing to switch from the first current to the second current.
Public/Granted literature
Information query
Patent Agency Ranking
0/0