Invention Grant
- Patent Title: Nonvolatile semiconductor storage device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13081868Application Date: 2011-04-07
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Publication No.: US08406057B2Publication Date: 2013-03-26
- Inventor: Mario Sako
- Applicant: Mario Sako
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-090888 20100409
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
According to one embodiment, a semiconductor storage device includes a memory string, a bit line, a sense simplifier, a first MOS, a first charging-circuit, a second-charging circuit, and a controller. The memory string includes memory cells. The bit line is connected to the memory cell. The sense amplifier applies a voltage to the bit line. The first MOS is electrically connected between the sense amplifier and bit line. The first charging circuit has a first current supply capacity and transfers a first current. The second charging-circuit has a second current supply capacity. The controller controls a first timing to switch from the first current to the second current.
Public/Granted literature
- US20110249508A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2011-10-13
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