Invention Grant
US08406077B2 Multi-voltage level, multi-dynamic circuit structure device 有权
多电平电平,多动态电路结构器件

  • Patent Title: Multi-voltage level, multi-dynamic circuit structure device
  • Patent Title (中): 多电平电平,多动态电路结构器件
  • Application No.: US12828719
    Application Date: 2010-07-01
  • Publication No.: US08406077B2
    Publication Date: 2013-03-26
  • Inventor: Jentsung Ken Lin
  • Applicant: Jentsung Ken Lin
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Peter M. Kamarchik; Nicholas J. Pauley; Jonathan T. Velasco
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Multi-voltage level, multi-dynamic circuit structure device
Abstract:
In a particular embodiment, a method includes discharging a first dynamic node at a first discharge circuit of a first dynamic circuit structure in response to receiving an asserted discharge signal. The first dynamic circuit structure includes the first dynamic node at a first voltage level and a first keeper circuit that is disabled when the asserted discharge signal is received. The asserted discharge signal has a second voltage level that is different from the first voltage level. A second keeper circuit of a second dynamic circuit structure is enabled responsive to discharging the first dynamic node to maintain a second dynamic node of the second dynamic circuit structure at the first voltage level.
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