Invention Grant
- Patent Title: Multi-voltage level, multi-dynamic circuit structure device
- Patent Title (中): 多电平电平,多动态电路结构器件
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Application No.: US12828719Application Date: 2010-07-01
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Publication No.: US08406077B2Publication Date: 2013-03-26
- Inventor: Jentsung Ken Lin
- Applicant: Jentsung Ken Lin
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Peter M. Kamarchik; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
In a particular embodiment, a method includes discharging a first dynamic node at a first discharge circuit of a first dynamic circuit structure in response to receiving an asserted discharge signal. The first dynamic circuit structure includes the first dynamic node at a first voltage level and a first keeper circuit that is disabled when the asserted discharge signal is received. The asserted discharge signal has a second voltage level that is different from the first voltage level. A second keeper circuit of a second dynamic circuit structure is enabled responsive to discharging the first dynamic node to maintain a second dynamic node of the second dynamic circuit structure at the first voltage level.
Public/Granted literature
- US20120002500A1 Multi-Voltage Level, Multi-Dynamic Circuit Structure Device Public/Granted day:2012-01-05
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