Invention Grant
- Patent Title: Memory circuits having a plurality of keepers
- Patent Title (中): 存储电路具有多个保持器
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Application No.: US13025668Application Date: 2011-02-11
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Publication No.: US08406078B2Publication Date: 2013-03-26
- Inventor: Annie Lum , Derek C. Tao , Young Seog Kim
- Applicant: Annie Lum , Derek C. Tao , Young Seog Kim
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A memory circuit includes a first plurality of memory arrays disposed in a column fashion. The memory circuit includes a first plurality of keepers each of which is electrically coupled with a corresponding one of the first plurality of memory arrays. A first current limiter is electrically coupled with and shared by the first plurality of keepers. A first plurality of sector switches each are electrically coupled between the first current limiter and a respective one of the first plurality of keepers.
Public/Granted literature
- US20110280096A1 MEMORY CIRCUITS HAVING A PLURALITY OF KEEPERS Public/Granted day:2011-11-17
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