Invention Grant
US08406575B2 Junction field effect transistor geometry for optical modulators
有权
用于光学调制器的结场效应晶体管几何形状
- Patent Title: Junction field effect transistor geometry for optical modulators
- Patent Title (中): 用于光学调制器的结场效应晶体管几何形状
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Application No.: US12535296Application Date: 2009-08-04
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Publication No.: US08406575B2Publication Date: 2013-03-26
- Inventor: William Michael John Green , Yurii A. Vlasov
- Applicant: William Michael John Green , Yurii A. Vlasov
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael J. Buchenhorner; Vazken Alexanian
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02B6/12 ; H01L29/80
Abstract:
An optoelectronic apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.
Public/Granted literature
- US20090290831A1 Junction Field Effect Transistor Geometry for Optical Modulators Public/Granted day:2009-11-26
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