Invention Grant
- Patent Title: Silicon purification method
- Patent Title (中): 硅精制法
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Application No.: US13058471Application Date: 2009-08-11
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Publication No.: US08409319B2Publication Date: 2013-04-02
- Inventor: Yasuo Ookubo , Youichi Hirose , Hiroshi Nagata
- Applicant: Yasuo Ookubo , Youichi Hirose , Hiroshi Nagata
- Applicant Address: JP Chigasaki-Shi
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP Chigasaki-Shi
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Priority: JPP2008-207797 20080812
- International Application: PCT/JP2009/064198 WO 20090811
- International Announcement: WO2010/018831 WO 20100218
- Main IPC: C01B33/037
- IPC: C01B33/037 ; C22B9/22
Abstract:
A silicon purification method includes a solidification purification step comprising: preparing the base material to be purified, loading the base material into a crucible, irradiating part of the base material, and fully melting the base material; gradually solidifying the base material by gradually weakening an electron beam so that the solidification proceeds until the solidifying portion occupies a first predetermined ratio of the base material; loading the remnant of the base material into the crucible, and fully melting the remnant of the base material by irradiating the entire area of the remnant of the base material with the electron beam; gradually solidifying the molten metal portion by gradually weakening the electron beam so that the solidification proceeds until the solidifying portion occupies a second predetermined ratio of the molten metal portion; and removing an unsolidified molten metal portion.
Public/Granted literature
- US20110132142A1 SILICON PURIFICATION METHOD Public/Granted day:2011-06-09
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