Invention Grant
- Patent Title: Film thickness measurement method, epitaxial wafer production process and epitaxial wafer
- Patent Title (中): 膜厚测量方法，外延晶片生产工艺和外延晶片
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Application No.: US12480921Application Date: 2009-06-09
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Publication No.: US08409349B2Publication Date: 2013-04-02
- Inventor: Kazuhiro Ohkubo
- Applicant: Kazuhiro Ohkubo
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-151858 20080610
- Main IPC: H01L21/322
- IPC: H01L21/322 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; C30B35/00
Abstract:
A film thickness measurement method for measuring a change in film thickness of 0.3 μm or less in a silicon wafer by FTIR, having an auxiliary film formation step for depositing an auxiliary film for measurement on a surface to be measured for the change in film thickness, an auxiliary film thickness measurement step for measuring the film thickness of the auxiliary film, a measurement step for measuring the film thickness of the auxiliary film after the change in film thickness, and a calculation step for calculating a change in film thickness of a back surface deposit from the result of the measurement step and the result of the auxiliary film thickness measurement step.
Public/Granted literature
- US20090305021A1 FILM THICKNESS MEASUREMENT METHOD, EPITAXIAL WAFER PRODUCTION PROCESS AND EPITAXIAL WAFER Public/Granted day:2009-12-10
Information query
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