Invention Grant
- Patent Title: Pattern forming method and method for manufacturing semiconductor device
- Patent Title (中): 图案形成方法和半导体器件的制造方法
-
Application No.: US11848786Application Date: 2007-08-31
-
Publication No.: US08409786B2Publication Date: 2013-04-02
- Inventor: Tomohiko Yamamoto , Satoru Asai
- Applicant: Tomohiko Yamamoto , Satoru Asai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-144343 20060524; JP2007-050730 20070228
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
Double exposure is performed by using a pair of photomasks, an attenuated phase shift mask or the like which is not an alternating phase shift mask, and a pattern is transferred onto a photoresist. Here, on the occasion of performing exposure with the photomask for forming a finer pattern, double pole illumination is used as an illumination system.
Public/Granted literature
- US20070298353A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2007-12-27
Information query
IPC分类:
