Invention Grant
- Patent Title: Multi-project wafer and method of making same
- Patent Title (中): 多项目晶圆及其制作方法
-
Application No.: US12941240Application Date: 2010-11-08
-
Publication No.: US08409881B2Publication Date: 2013-04-02
- Inventor: William Cheng , Mirng-Ji Lii , Chen-Yung Ching , Hsin-Hui Lee
- Applicant: William Cheng , Mirng-Ji Lii , Chen-Yung Ching , Hsin-Hui Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type.
Public/Granted literature
- US20110049516A1 MULTI-PROJECT WAFER AND METHOD OF MAKING SAME Public/Granted day:2011-03-03
Information query
IPC分类: