Invention Grant
US08409895B2 Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
有权
基于氮化镓的LED制造，采用PVD形成的氮化铝缓冲层
- Patent Title: Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
- Patent Title (中): 基于氮化镓的LED制造，采用PVD形成的氮化铝缓冲层
-
Application No.: US13036273Application Date: 2011-02-28
-
Publication No.: US08409895B2Publication Date: 2013-04-02
- Inventor: Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
- Applicant: Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L33/005
- IPC: H01L33/005
Abstract:
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
Public/Granted literature
- US20120156819A1 GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER Public/Granted day:2012-06-21
Information query
