Invention Grant
US08409904B2 Methods for forming anti-reflection structures for CMOS image sensors
有权
CMOS图像传感器形成抗反射结构的方法
- Patent Title: Methods for forming anti-reflection structures for CMOS image sensors
- Patent Title (中): CMOS图像传感器形成抗反射结构的方法
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Application No.: US13165375Application Date: 2011-06-21
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Publication No.: US08409904B2Publication Date: 2013-04-02
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- Applicant: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
Public/Granted literature
- US20110250715A1 METHODS FOR FORMING ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS Public/Granted day:2011-10-13
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