Invention Grant
- Patent Title: Method for manufacturing information aquiring semiconductor device
- Patent Title (中): 制造半导体器件信息的方法
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Application No.: US12489636Application Date: 2009-06-23
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Publication No.: US08409907B2Publication Date: 2013-04-02
- Inventor: Atsushi Toda , Hirofumi Sumi
- Applicant: Atsushi Toda , Hirofumi Sumi
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JPP2004-250049 20040830
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group.
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