Invention Grant
- Patent Title: Semiconductor device and method for producing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13536322Application Date: 2012-06-28
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Publication No.: US08409913B2Publication Date: 2013-04-02
- Inventor: Masaya Katayama
- Applicant: Masaya Katayama
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-178755 20090731
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
A semiconductor device includes a semiconductor substrate having at least one surface provided with a semiconductor element, wherein the semiconductor substrate includes a region of a first conductivity type, the region being formed in a surface layer portion of the semiconductor substrate; a first diffusion region of a second conductivity type, the first diffusion region having a first impurity concentration and being formed in the surface layer portion, and a pn junction being formed between the first diffusion region and the region of the first conductivity type; and a first metal silicide film formed on part of a portion of the surface corresponding to the first diffusion region.
Public/Granted literature
- US20120270364A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME Public/Granted day:2012-10-25
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