Invention Grant
- Patent Title: Producing transistor including multi-layer reentrant profile
- Patent Title (中): 生产晶体管包括多层折返型材
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Application No.: US12986247Application Date: 2011-01-07
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Publication No.: US08409937B2Publication Date: 2013-04-02
- Inventor: Lee W. Tutt , Shelby F. Nelson
- Applicant: Lee W. Tutt , Shelby F. Nelson
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent William R. Zimmerli
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/84
Abstract:
A method of producing a transistor includes providing a substrate including in order a first electrically conductive material layer, a second electrically conductive material layer, and a third electrically conductive material layer. A resist material layer is deposited over the third electrically conductive material layer. The resist material layer is patterned to expose a portion of the third electrically conductive material layer. Some of the third electrically conductive material layer is removed to expose a portion of the second electrically conductive material layer. The third electrically conductive material layer is caused to overhang the second electrically conductive material layer by removing some of the second electrically conductive material layer. Some of the first electrically conductive material layer is removed.
Public/Granted literature
- US20120178247A1 PRODUCING TRANSISTOR INCLUDING MULTI-LAYER REENTRANT PROFILE Public/Granted day:2012-07-12
Information query
IPC分类:
