Invention Grant
US08409942B2 Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition
有权
基于在工作功能金属沉积之前应用的反向偏移间隔件的替换门方法
- Patent Title: Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition
- Patent Title (中): 基于在工作功能金属沉积之前应用的反向偏移间隔件的替换门方法
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Application No.: US12914570Application Date: 2010-10-28
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Publication No.: US08409942B2Publication Date: 2013-04-02
- Inventor: Thilo Scheiper , Sven Beyer , Uwe Griebenow , Jan Hoentschel
- Applicant: Thilo Scheiper , Sven Beyer , Uwe Griebenow , Jan Hoentschel
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102010001403 20100129
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any electrode metals in the gate opening. Moreover, the spacer may be used for reducing the gate length, while not requiring more complex gate patterning strategies.
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Information query
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