Invention Grant
US08409946B2 Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells
有权
形成场效应晶体管，多个场效应晶体管和包括多个单独存储单元的DRAM电路的方法
- Patent Title: Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells
- Patent Title (中): 形成场效应晶体管，多个场效应晶体管和包括多个单独存储单元的DRAM电路的方法
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Application No.: US13528028Application Date: 2012-06-20
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Publication No.: US08409946B2Publication Date: 2013-04-02
- Inventor: Paul Grisham , Gordon A. Haller , Sahn D. Tang
- Applicant: Paul Grisham , Gordon A. Haller , Sahn D. Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/8236
- IPC: H01L21/8236
Abstract:
A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed to comprise opposing insulative projections extending toward one another partially under the channel region along the channel length and with semiconductor material being received over the projections. The trench isolation material is etched to expose opposing sides of the semiconductor material along the channel length. The exposed opposing sides of the semiconductor material are etched along the channel length to form a channel fin projecting upwardly relative to the projections. A gate is formed over a top and opposing sides of the fin along the channel length. Other methods and structures are disclosed.
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