Invention Grant
US08409962B2 Manufacturing method of copper interconnection structure with MIM capacitor
失效
具有MIM电容器的铜互连结构的制造方法
- Patent Title: Manufacturing method of copper interconnection structure with MIM capacitor
- Patent Title (中): 具有MIM电容器的铜互连结构的制造方法
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Application No.: US12937264Application Date: 2010-07-14
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Publication No.: US08409962B2Publication Date: 2013-04-02
- Inventor: Deyuan Xiao , Xiaolu Huang
- Applicant: Deyuan Xiao , Xiaolu Huang
- Applicant Address: CN Shanghai
- Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Current Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Current Assignee Address: CN Shanghai
- Agency: Global IP Services
- Agent Tianhua Gu
- Priority: CN201010114118 20100225
- International Application: PCT/CN2010/075146 WO 20100714
- International Announcement: WO2011/103735 WO 20110901
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
present invention discloses a manufacturing method for a copper interconnection structure with MIM capacitor. The method firstly makes a copper conductive pattern in a copper interconnection structure and a copper through hole bolt connected with the copper conductive pattern; etch away an insulation layer around the copper through hole bolt and deposit a etch stop layer, so as to expose the top and side surface of the copper through hole bolt and part of the top surface of the copper conductive pattern; deposit a dielectric layer on the obtained structure and fill a protection material in the recession area of the obtained structure; etch a trench for receiving other copper conductive patterns; remove the protection material; plate copper in the recession area, and plate copper in the trench, so as to obtain a copper interconnection structure with MIM capacitor.
Public/Granted literature
- US20110291235A1 COPPER INTERCONNECTION STRUCTURE WITH MIM CAPACITOR AND A MANUFACTURING METHOD THEREOF Public/Granted day:2011-12-01
Information query
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