The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.