Invention Grant
US08409968B2 Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion
有权
通过改性区域形成和随后的片材膨胀来切割半导体衬底的方法
- Patent Title: Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion
- Patent Title (中): 通过改性区域形成和随后的片材膨胀来切割半导体衬底的方法
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Application No.: US13206181Application Date: 2011-08-09
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Publication No.: US08409968B2Publication Date: 2013-04-02
- Inventor: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
- Applicant: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2002-351600 20021203
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
Public/Granted literature
- US20110306182A1 METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE Public/Granted day:2011-12-15
Information query
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