Invention Grant
- Patent Title: Optical device wafer processing method
- Patent Title (中): 光器件晶圆加工方法
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Application No.: US13223851Application Date: 2011-09-01
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Publication No.: US08409969B2Publication Date: 2013-04-02
- Inventor: Yohei Gokita
- Applicant: Yohei Gokita
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2010-205939 20100914
- Main IPC: H01L21/78
- IPC: H01L21/78

Abstract:
An optical device wafer has a device area where a plurality of optical devices are formed on the front side of a sapphire substrate, and a peripheral marginal area surrounding the device area. The device area projects from the peripheral marginal area. A break start point is formed on the front side of the sapphire substrate by applying a laser beam along the boundary between the device area and the peripheral marginal area. A protective member is attached to the front side of the optical device wafer. The optical device wafer is held on a chuck table of a grinding apparatus so that the protective member comes into contact with a holding surface of the chuck table. The back side of the sapphire substrate is ground to reduce the thickness thereof to a predetermined thickness.
Public/Granted literature
- US20120061010A1 OPTICAL DEVICE WAFER PROCESSING METHOD Public/Granted day:2012-03-15
Information query
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