Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same

Invention Grant

US08409974B2 Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same 失效

Title translation: 应用绝缘体上的单栅极和双栅极MOSFET及其形成方法

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Patent Title: Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
Patent Title (中): 应用绝缘体上的单栅极和双栅极MOSFET及其形成方法
Application No.: US12544431

Application Date: 2009-08-20
Publication No.: US08409974B2

Publication Date: 2013-04-02
Inventor: Guy Moshe Cohen , Patricia May Mooney
Applicant: Guy Moshe Cohen , Patricia May Mooney
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: McGinn IP Law Group, PLLC
Agent Anne V. Dougherty, Esq.
Main IPC: H01L21/20
IPC: H01L21/20

Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same

Abstract:

A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.

Abstract(Chinese):

形成半导体结构（及其结构）的方法包括使自立式半导体变形，将应变的自立式半导体固定在基板上。

Public/Granted literature

US20090309160A1 STRAINED-SILICON-ON-INSULATOR SINGLE-AND DOUBLE-GATE MOSFET AND METHOD FOR FORMING THE SAME Public/Granted day:2009-12-17

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长