Invention Grant
US08409982B2 Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
失效
通过高密度互连(HDI)衬底材料上的电介质涂层形成固体盲孔的方法
- Patent Title: Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
- Patent Title (中): 通过高密度互连(HDI)衬底材料上的电介质涂层形成固体盲孔的方法
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Application No.: US13182838Application Date: 2011-07-14
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Publication No.: US08409982B2Publication Date: 2013-04-02
- Inventor: Kevin C. Olson , Alan E. Wang
- Applicant: Kevin C. Olson , Alan E. Wang
- Applicant Address: US OH Cleveland
- Assignee: PPG Industries Ohio, Inc.
- Current Assignee: PPG Industries Ohio, Inc.
- Current Assignee Address: US OH Cleveland
- Agent Robert P. Lenart
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A method includes forming a first substrate by (a) applying an electrodepositable dielectric coating onto a conductive surface; (b) curing the dielectric coating; (c) depositing an adhesion layer and a seed layer onto the dielectric coating; (d) applying a layer of a first removable material to the seed layer; (e) forming openings in the first removable material to expose areas of the seed layer; (f) electroplating a first conductive material to the exposed areas of the seed layer; (g) applying a layer of a second removable material; (h) forming openings in the second removable material to expose areas of the first conductive material; (i) plating a second conductive material to the exposed areas of the first conductive material; (j) removing the first and second removable materials; (k) removing unplated portions of the seed layer; repeating steps (a) through (k) to form a second substrate; and laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.
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