Invention Grant
- Patent Title: Method for producing a polished semiconductor wafer
- Patent Title (中): 抛光半导体晶片的制造方法
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Application No.: US12850019Application Date: 2010-08-04
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Publication No.: US08409992B2Publication Date: 2013-04-02
- Inventor: Bertram Moeckel , Helmut Franke
- Applicant: Bertram Moeckel , Helmut Franke
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102009037281 20090812
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/304
Abstract:
A polished semiconductor wafer of high flatness is produced by the following ordered steps: slicing a semiconductor wafer from a rod composed of semiconductor material, material-removal processing of at least one side of the semiconductor wafer, and polishing of at least one side of the semiconductor wafer, wherein the semiconductor wafer has, after the material-removing processing and before the polishing on at least one side to be polished, along its margin, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring lying at the edge of the semiconductor wafer.
Public/Granted literature
- US20110039411A1 Method For Producing A Polished Semiconductor Wafer Public/Granted day:2011-02-17
Information query
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