Invention Grant
- Patent Title: Method and system for controlling copper chemical mechanical polish uniformity
- Patent Title (中): 控制铜化学机械抛光均匀性的方法和系统
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Application No.: US11810720Application Date: 2007-06-07
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Publication No.: US08409993B2Publication Date: 2013-04-02
- Inventor: Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
- Applicant: Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
Public/Granted literature
- US20080305563A1 Method and system for controlling copper chemical mechanical polish uniformity Public/Granted day:2008-12-11
Information query
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