Invention Grant
- Patent Title: Back contact for thin film solar cells
- Patent Title (中): 薄膜太阳能电池背面接触
-
Application No.: US12657872Application Date: 2010-01-28
-
Publication No.: US08410357B2Publication Date: 2013-04-02
- Inventor: Puthur D. Paulson , Craig Leidholm , Damoder Reddy , Charlie Hotz
- Applicant: Puthur D. Paulson , Craig Leidholm , Damoder Reddy , Charlie Hotz
- Applicant Address: US CA San Jose
- Assignee: Solexant Corp.
- Current Assignee: Solexant Corp.
- Current Assignee Address: US CA San Jose
- Agency: Nold Intellectual Property Law
- Agent Charles R. Nold
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.
Public/Granted literature
- US20100229931A1 Back contact for thin film solar cells Public/Granted day:2010-09-16
Information query
IPC分类:
