Invention Grant
- Patent Title: Chalcogenide nanoionic-based radio frequency switch
- Patent Title (中): 基于硫族元素的纳米离子型射频开关
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Application No.: US13050229Application Date: 2011-03-17
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Publication No.: US08410469B2Publication Date: 2013-04-02
- Inventor: James Nessel , Richard Lee
- Applicant: James Nessel , Richard Lee
- Applicant Address: US DC Washington
- Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
- Current Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Agent Robert H. Earp, III
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.
Public/Granted literature
- US20110162950A1 Chalcogenide Nanoionic-Based Radio Frequency Switch Public/Granted day:2011-07-07
Information query
IPC分类: