Invention Grant
- Patent Title: CMOS-MEMS cantilever structure
- Patent Title (中): CMOS-MEMS悬臂结构
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Application No.: US12708546Application Date: 2010-02-19
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Publication No.: US08410480B2Publication Date: 2013-04-02
- Inventor: Chin-Fong Chiu , Ying Zong Juang , Hann Huei Tsai , Sheng-Hsiang Tseng , Chen-Fu Lin
- Applicant: Chin-Fong Chiu , Ying Zong Juang , Hann Huei Tsai , Sheng-Hsiang Tseng , Chen-Fu Lin
- Applicant Address: TW Hsinchu
- Assignee: National Chip Implementation Center National Applied Research Laboratories
- Current Assignee: National Chip Implementation Center National Applied Research Laboratories
- Current Assignee Address: TW Hsinchu
- Agency: Stites & Harbison, PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: TW98141974A 20091209
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/20 ; H01L31/0376
Abstract:
The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.
Public/Granted literature
- US20110133256A1 CMOS-MEMS Cantilever Structure Public/Granted day:2011-06-09
Information query
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