Invention Grant
- Patent Title: Methods for high temperature processing of epitaxial chips
- Patent Title (中): 外延芯片的高温处理方法
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Application No.: US12589056Application Date: 2009-10-16
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Publication No.: US08410511B2Publication Date: 2013-04-02
- Inventor: Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
- Applicant: Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
- Applicant Address: US CA San Diego
- Assignee: Goldeneye, Inc.
- Current Assignee: Goldeneye, Inc.
- Current Assignee Address: US CA San Diego
- Agent William Propp, Esq.
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L21/20

Abstract:
High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.
Public/Granted literature
- US20100264452A1 Methods for high temperature processing of epitaxial chips Public/Granted day:2010-10-21
Information query
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