Invention Grant
- Patent Title: Sensitive field effect transistor apparatus
- Patent Title (中): 敏感场效应晶体管装置
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Application No.: US12591466Application Date: 2009-11-20
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Publication No.: US08410530B2Publication Date: 2013-04-02
- Inventor: Chao-Sung Lai , Cheng-En Lue , Chia-Ming Yang , Szu-Chieh Wang
- Applicant: Chao-Sung Lai , Cheng-En Lue , Chia-Ming Yang , Szu-Chieh Wang
- Applicant Address: TW
- Assignee: Chang Gung University
- Current Assignee: Chang Gung University
- Current Assignee Address: TW
- Agency: Bacon & Thomas, PLLC
- Priority: TW98117383A 20090526
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of the sensitive membrane to hydrogen ions is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. A differential amplifier is used to read a signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.
Public/Granted literature
- US20100301399A1 Sensitive field effect transistor apparatus Public/Granted day:2010-12-02
Information query
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