The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.