Invention Grant
- Patent Title: Capacitor and manufacturing method thereof
- Patent Title (中): 电容器及其制造方法
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Application No.: US13093840Application Date: 2011-04-25
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Publication No.: US08410535B2Publication Date: 2013-04-02
- Inventor: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L21/8242

Abstract:
A capacitor and a manufacturing method thereof are provided. The capacitor includes a first electrode, a first metal layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate. The first metal layer is disposed on the first electrode. The dielectric layer is disposed on the first metal layer, wherein the material of the first metal layer does not react with the material of the dielectric layer. The second electrode is disposed on the dielectric layer.
Public/Granted literature
- US20120267760A1 CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-10-25
Information query
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