Invention Grant
US08410541B2 CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same
有权
具有受控阈值电压特性的CMOSFET器件及其制造方法
- Patent Title: CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same
- Patent Title (中): 具有受控阈值电压特性的CMOSFET器件及其制造方法
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Application No.: US12935364Application Date: 2010-06-24
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Publication No.: US08410541B2Publication Date: 2013-04-02
- Inventor: Wenwu Wang , Huilong Zhu , Shijie Chen , Dapeng Chen
- Applicant: Wenwu Wang , Huilong Zhu , Shijie Chen , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Knobbe Martens Olson & Bear, LLP
- Priority: CN200910089597 20090722
- International Application: PCT/CN2010/074384 WO 20100624
- International Announcement: WO2011/009361 WO 20110127
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
There is provided a CMOSFET device with threshold voltage controlled by means of interface dipoles and a method of fabricating the same. A cap layer, for example a very thin layer of poly-silicon, amorphous silicon, or SiO2, is interposed inside high-k gate dielectric layers of the CMOSFET device, and the threshold voltage is adjusted by means of the interface dipoles formed by the cap layer inside the high-k gate dielectric layers. According to the present invention, it is possible to effectively optimize the threshold voltage of the CMOSFET device without significantly increasing EOT thereof.
Public/Granted literature
- US20120104506A1 CMOSFET DEVICE WITH CONTROLLED THRESHOLD VOLTAGE CHARACTERISTICS AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-05-03
Information query
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