Invention Grant
- Patent Title: Semiconductor device and DC-DC converter
- Patent Title (中): 半导体器件和DC-DC转换器
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Application No.: US12408056Application Date: 2009-03-20
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Publication No.: US08410546B2Publication Date: 2013-04-02
- Inventor: Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
- Applicant: Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2008-085359 20080328; JP2009-028910 20090210
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
Public/Granted literature
- US20090242977A1 SEMICONDUCTOR DEVICE AND DC-DC CONVERTER Public/Granted day:2009-10-01
Information query
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