Invention Grant
US08410552B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
有权
用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
- Patent Title: Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
- Patent Title (中): 用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
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Application No.: US12855744Application Date: 2010-08-13
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Publication No.: US08410552B2Publication Date: 2013-04-02
- Inventor: Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
- Applicant: Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2009-198266 20090828
- Main IPC: H01L29/066
- IPC: H01L29/066
Abstract:
Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
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