Invention Grant
- Patent Title: Integrated photodiode for semiconductor substrates
- Patent Title (中): 用于半导体衬底的集成光电二极管
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Application No.: US12547463Application Date: 2009-08-25
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Publication No.: US08410568B2Publication Date: 2013-04-02
- Inventor: Gary Steinbrueck , James S. Vickers , Mario M. Pelella , Majid Aghababazadeh , Nader Pakdaman
- Applicant: Gary Steinbrueck , James S. Vickers , Mario M. Pelella , Majid Aghababazadeh , Nader Pakdaman
- Applicant Address: US CA Santa Clara
- Assignee: Tau-Metrix, Inc.
- Current Assignee: Tau-Metrix, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Mahamedi Paradice Kreisman LLP
- Main IPC: H01L31/0203
- IPC: H01L31/0203

Abstract:
A substrate section that is at least partially fabricated to include contact elements and materials. The substrate section includes doped regions that have a heavily doped N-type region and a heavily doped P-type region adjacent to one another. An exterior surface of the substrate has a topography that includes a light-transparent region in which light, from a light source, is able to reach a surface of the substrate. An application of light onto the light transparent region is sufficient to cause a voltage potential to form across a junction of the heavily doped regions. The substrate section may further comprise one or more electrical contacts, positioned on the substrate section to conduct current, resulting from the voltage potential created with application of light onto the light transparent region, to a circuit on the semiconductor substrate.
Public/Granted literature
- US20100084729A1 INTEGRATED PHOTODIODE FOR SEMICONDUCTOR SUBSTRATES Public/Granted day:2010-04-08
Information query
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