Invention Grant
US08410570B2 Photodiode with interfacial charge control and associated process
有权
具有界面电荷控制和相关工艺的光电二极管
- Patent Title: Photodiode with interfacial charge control and associated process
- Patent Title (中): 具有界面电荷控制和相关工艺的光电二极管
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Application No.: US12781489Application Date: 2010-05-17
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Publication No.: US08410570B2Publication Date: 2013-04-02
- Inventor: Jorge Regolini , Michael Gros-Jean
- Applicant: Jorge Regolini , Michael Gros-Jean
- Applicant Address: FR Montrouge FR Crolles
- Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Montrouge FR Crolles
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0953288 20090518
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0232 ; H01L31/06
Abstract:
A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.
Public/Granted literature
- US20100289106A1 PHOTODIODE WITH INTERFACIAL CHARGE CONTROL AND ASSOCIATED PROCESS Public/Granted day:2010-11-18
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