Invention Grant
US08410572B2 Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production
有权
具有发射极和/或集电极接触结构的双极晶体管形成肖特基接触和生产方法
- Patent Title: Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production
- Patent Title (中): 具有发射极和/或集电极接触结构的双极晶体管形成肖特基接触和生产方法
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Application No.: US13124091Application Date: 2009-10-22
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Publication No.: US08410572B2Publication Date: 2013-04-02
- Inventor: Léon C. M. van den Oever
- Applicant: Léon C. M. van den Oever
- Applicant Address: DE Munich
- Assignee: EPCOS AG
- Current Assignee: EPCOS AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Priority: EP08167538 20081024
- International Application: PCT/EP2009/063921 WO 20091022
- International Announcement: WO2010/046449 WO 20100429
- Main IPC: H01L27/095
- IPC: H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108 ; H01L29/00 ; H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11 ; H01L21/331
Abstract:
A base contact connection, an emitter structure and a collector structure are arranged on an n-layer, which can be provided for additional npn transistors. The collector structure is arranged laterally to the emitter structure and at least one of the emitter and collector comprises a Schottky contact on a surface area of the n-layer.
Public/Granted literature
- US20110248375A1 Bipolar Transistor with an N-Type Base and Method of Production Public/Granted day:2011-10-13
Information query
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