Invention Grant
- Patent Title: High voltage semiconductor devices and methods of forming the same
- Patent Title (中): 高压半导体器件及其形成方法
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Application No.: US12750187Application Date: 2010-03-30
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Publication No.: US08410575B2Publication Date: 2013-04-02
- Inventor: Martin Kerber , Uwe Wahl
- Applicant: Martin Kerber , Uwe Wahl
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L21/38
Abstract:
High voltage semiconductor devices and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming first trenches in an insulating material. A trap region is formed in the insulating material by introducing an impurity into the first trenches. The first trenches are filled with a conductive material.
Public/Granted literature
- US20110241160A1 High Voltage Semiconductor Devices and Methods of Forming the Same Public/Granted day:2011-10-06
Information query
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