Invention Grant
- Patent Title: Method of manufacturing a semiconductor component and structure
- Patent Title (中): 制造半导体元件和结构的方法
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Application No.: US12962579Application Date: 2010-12-07
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Publication No.: US08410578B2Publication Date: 2013-04-02
- Inventor: Sallie Hose , Peter A. Burke , Li Jiang , Sudhama C. Shastri
- Applicant: Sallie Hose , Peter A. Burke , Li Jiang , Sudhama C. Shastri
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Rennie William Dover
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L21/02 ; H01L21/768
Abstract:
A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.
Public/Granted literature
- US20110079876A1 Method of Manufacturing a Semiconductor Component and Structure Public/Granted day:2011-04-07
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