Invention Grant
- Patent Title: Three dimensional semiconductor device
- Patent Title (中): 三维半导体器件
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Application No.: US12604283Application Date: 2009-10-22
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Publication No.: US08410597B2Publication Date: 2013-04-02
- Inventor: Hyun Gue Shim , Hee Bong Lee , Jin Wook Jeong
- Applicant: Hyun Gue Shim , Hee Bong Lee , Jin Wook Jeong
- Applicant Address: KR Asan-si
- Assignee: Hana Micron Inc.
- Current Assignee: Hana Micron Inc.
- Current Assignee Address: KR Asan-si
- Agency: Reinhart Boerner Van Deuren P.C.
- Priority: KR10-2008-0127525 20081215
- Main IPC: H01L27/06
- IPC: H01L27/06

Abstract:
A 3D semiconductor device includes a conductive plate defining four sides and four recesses formed in the four sides, respectively. The conductive plate has first and second surfaces opposite to each other. A plurality of conductive leads are located in the recesses, respectively, and the conductive leads have first and second surfaces opposite to each other. A semiconductor die is attached onto the central area of the conductive plate. A plurality of conductive wires electrically connects the semiconductor die to the conductive leads. An encapsulant encloses, as in a capsule, the conductive plate, the conductive leads, the semiconductor die, and the conductive wires in such a manner that the first and second surfaces of the conductive plate and the first and second surfaces of the conductive leads are exposed to the outside.
Public/Granted literature
- US20100148338A1 Three Dimensional Semiconductor Device Public/Granted day:2010-06-17
Information query
IPC分类: