Invention Grant
- Patent Title: Lead-free structures in a semiconductor device
- Patent Title (中): 半导体器件中的无铅结构
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Application No.: US12912519Application Date: 2010-10-26
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Publication No.: US08410604B2Publication Date: 2013-04-02
- Inventor: Laurene Yip , Leilei Zhang , Kumar Nagarajan
- Applicant: Laurene Yip , Leilei Zhang , Kumar Nagarajan
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent LeRoy D. Maunu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/44 ; H01L21/00

Abstract:
A semiconductor device includes a semiconductor die and a plurality of lead-free solder bumps disposed on a surface of the semiconductor die. A substrate includes a plurality of metal layers and a plurality of dielectric layers. One of the metal layers includes a plurality of contact pads corresponding to the plurality of lead-free solder bumps, and one of the dielectric layers is an exterior dielectric layer having a plurality of respective openings for the contact pad. A plurality of respective copper posts is disposed on the contact pads. The respective copper post for each contact pad extends from the contact pad through the respective opening for the contact pad. The semiconductor die is mounted on the substrate with connections between the plurality of lead-free solder bumps and the plurality of copper posts.
Public/Granted literature
- US20120098130A1 LEAD-FREE STRUCTURES IN A SEMICONDUCTOR DEVICE Public/Granted day:2012-04-26
Information query
IPC分类: