Invention Grant
US08410605B2 Extended under-bump metal layer for blocking alpha particles in a semiconductor device
有权
用于阻挡半导体器件中的α粒子的扩展的凸块下金属层
- Patent Title: Extended under-bump metal layer for blocking alpha particles in a semiconductor device
- Patent Title (中): 用于阻挡半导体器件中的α粒子的扩展的凸块下金属层
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Application No.: US13451226Application Date: 2012-04-19
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Publication No.: US08410605B2Publication Date: 2013-04-02
- Inventor: Michael J. Hart
- Applicant: Michael J. Hart
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent LeRoy D. Maunu; Lois D. Cartier
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
An integrated circuit (IC) has an under-bump metal (UBM) pad disposed between a solder bump and a semiconductor portion of the IC. A UBM layer is disposed between the solder bump and the semiconductor portion and includes the UBM pad and a UBM field. The UBM pad has a contact perimeter formed with the solder bump. The UBM pad extends beyond the contact perimeter a sufficient distance to block alpha particles emitted from the surface of the solder bump from causing an upset event in the semiconductor portion. The UBM field is separated from each UBM pad by a gap extending from the UBM pad to the UBM field so as to electrically isolate the UBM field from the UBM pad.
Public/Granted literature
- US20120199959A1 EXTENDED UNDER-BUMP METAL LAYER FOR BLOCKING ALPHA PARTICLES IN A SEMICONDUCTOR DEVICE Public/Granted day:2012-08-09
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