Invention Grant
US08410609B2 Semiconductor device having carbon nanotube interconnects contact deposited with different orientation and method for manufacturing the same 有权
具有不同取向沉积的碳纳米管互连的半导体器件及其制造方法

Semiconductor device having carbon nanotube interconnects contact deposited with different orientation and method for manufacturing the same
Abstract:
The present invention relates to a semiconductor device structure and a method for manufacturing the same; the structure comprises: a semiconductor substrate on which a device structure is formed thereon; an interlayer dielectric layer formed on the device structure, wherein a trench is formed in the interlayer dielectric layer, the trench comprises an incorporated via trench and a conductive wiring trench, and the conductive wiring trench is positioned on the via trench; and a conductive layer filled in the trench, wherein the conductive layer is electrically connected with the device structure; wherein the conductive layer comprises a conductive material and a nanotube/wire layer surrounded by the conductive material. Wherein, the conductive layer comprises a conductive material and a nanotube/wire layer surrounded by the conductive material. The conductive layer of the structure has better thermal conductivity, conductivity and high anti-electromigration capability, thus is able to effectively prevent metal ions from diffusing outwards.
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