Invention Grant
- Patent Title: Bias circuit generating bias from supply and threshold voltages
- Patent Title (中): 偏置电路从电源和阈值电压产生偏置
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Application No.: US12955371Application Date: 2010-11-29
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Publication No.: US08410772B1Publication Date: 2013-04-02
- Inventor: Krishna Chaitanya Potluri
- Applicant: Krishna Chaitanya Potluri
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent LeRoy D. Maunu
- Main IPC: G01R19/30
- IPC: G01R19/30

Abstract:
A bias circuit generates a bias voltage. The bias circuit includes a first, a second, and a third detection circuit and a summing circuit. The first detection circuit generates a first characterization voltage that represents a variation of a power supply voltage from a nominal voltage. The first characterization voltage increases as the power supply voltage decreases and the first characterization voltage decreases as the power supply voltage increases. The second detection circuit generates a second characterization voltage that represents a threshold voltage of one or more p-type transistors. The third detection circuit generates a third characterization voltage that represents a threshold voltage of one or more n-type transistors. The summing circuit generates the bias voltage that is the power supply voltage reduced by a weighted sum of the first, second, and third characterization voltages.
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