Invention Grant
US08410772B1 Bias circuit generating bias from supply and threshold voltages 有权
偏置电路从电源和阈值电压产生偏置

  • Patent Title: Bias circuit generating bias from supply and threshold voltages
  • Patent Title (中): 偏置电路从电源和阈值电压产生偏置
  • Application No.: US12955371
    Application Date: 2010-11-29
  • Publication No.: US08410772B1
    Publication Date: 2013-04-02
  • Inventor: Krishna Chaitanya Potluri
  • Applicant: Krishna Chaitanya Potluri
  • Applicant Address: US CA San Jose
  • Assignee: Xilinx, Inc.
  • Current Assignee: Xilinx, Inc.
  • Current Assignee Address: US CA San Jose
  • Agent LeRoy D. Maunu
  • Main IPC: G01R19/30
  • IPC: G01R19/30
Bias circuit generating bias from supply and threshold voltages
Abstract:
A bias circuit generates a bias voltage. The bias circuit includes a first, a second, and a third detection circuit and a summing circuit. The first detection circuit generates a first characterization voltage that represents a variation of a power supply voltage from a nominal voltage. The first characterization voltage increases as the power supply voltage decreases and the first characterization voltage decreases as the power supply voltage increases. The second detection circuit generates a second characterization voltage that represents a threshold voltage of one or more p-type transistors. The third detection circuit generates a third characterization voltage that represents a threshold voltage of one or more n-type transistors. The summing circuit generates the bias voltage that is the power supply voltage reduced by a weighted sum of the first, second, and third characterization voltages.
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