Invention Grant
- Patent Title: Switch testing circuit
- Patent Title (中): 开关测试电路
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Application No.: US12820081Application Date: 2010-06-21
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Publication No.: US08410782B2Publication Date: 2013-04-02
- Inventor: Yan Shi
- Applicant: Yan Shi
- Applicant Address: CN Shenzhen TW New Taipei
- Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010150182 20100419
- Main IPC: G01R31/02
- IPC: G01R31/02

Abstract:
A switch testing circuit is configured for testing a switch. The switch testing circuit includes a switch element, a first light emitting diode, and a control chip. The first light emitting diode, the switch element, and the switch are connected in series. The first light emitting diode is configured for indicating connection condition between the switch and the switch testing circuit. The control chip is configured for acquiring a voltage from one terminal of the switch element and comparing the acquired voltage with a comparison voltage to judge whether the switch is qualified or disqualified according to the comparison result.
Public/Granted literature
- US20110254556A1 SWITCH TESTING CIRCUIT Public/Granted day:2011-10-20
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