A transistor arrangement includes a switch transistor and a sense transistor. The switch transistor includes a charge storing structure and a control structure. The sense transistor includes a charge storing structure, a control structure and a select structure. The charge storing structure of the switch transistor is electrically connected to the charge storing structure of the sense transistor. The sense transistor is configured such that the select structure and the control structure of the sense transistor may be electrically controlled independently from one another.