Invention Grant
- Patent Title: Method and apparatus switching a semiconductor switch with a multi-stage drive circuit
- Patent Title (中): 用多级驱动电路切换半导体开关的方法和装置
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Application No.: US13466833Application Date: 2012-05-08
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Publication No.: US08410829B2Publication Date: 2013-04-02
- Inventor: Giao Minh Pham
- Applicant: Giao Minh Pham
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A multi-stage drive circuit is to be coupled to a semiconductor switch having a drive terminal, a first terminal and a second terminal, to switch the semiconductor switch on and off. The multi-stage drive circuit includes a first drive circuit, a second drive circuit and a selector circuit. The first drive circuit is to be coupled to provide a first drive signal to the drive terminal of the semiconductor switch and the second drive circuit is to be coupled to provide a second drive signal to the drive terminal of the semiconductor switch. The selector circuit is to be coupled to turn on the first and second drive circuits to provide the first and second drive signals to the drive terminal, respectively. The selector circuit turns on the second drive circuit responsive to a voltage between the first and second terminals of the semiconductor switch falling to a threshold value.
Public/Granted literature
- US20120223746A1 METHOD AND APPARATUS SWITCHING A SEMICONDUCTOR SWITCH WITH A MULTI-STAGE DRIVE CIRCUIT Public/Granted day:2012-09-06
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