Invention Grant
- Patent Title: Magneto resistive effect element with a magnetic film generating spin fluctuation of conduction electrons
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Application No.: US12457080Application Date: 2009-06-01
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Publication No.: US08411394B2Publication Date: 2013-04-02
- Inventor: Rie Sato
- Applicant: Rie Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-237463 20040817
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
The present invention is to be capable of suppressing magnetic white noises as far as possible. A resonant magneto-resistance effect element includes a first magnetic layer whose magnetization direction is substantially parallel to a film plane, a second magnetic film whose magnetization direction is substantially perpendicular to the film plane, and a non-magnetic layer which is provided between the first and second layers.
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Information query
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