Invention Grant
US08411399B2 Defectivity-immune technique of implementing MIM-based decoupling capacitors
有权
实现基于MIM的去耦电容器的缺陷免疫技术
- Patent Title: Defectivity-immune technique of implementing MIM-based decoupling capacitors
- Patent Title (中): 实现基于MIM的去耦电容器的缺陷免疫技术
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Application No.: US12839148Application Date: 2010-07-19
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Publication No.: US08411399B2Publication Date: 2013-04-02
- Inventor: Ramnath Venkatraman , Ruggero Castagnetti
- Applicant: Ramnath Venkatraman , Ruggero Castagnetti
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
An integrated circuit power supply decoupling circuit includes a capacitor and a protection circuit. The capacitor has a first terminal and a second terminal. The protection circuit includes a first transistor having a first conduction path, and a second transistor having a second conduction path. One terminal of the first conduction path is connected to the first terminal of the capacitor, and another terminal of the first conduction path is connected to a first power supply rail. One terminal of the second conduction path is connected to the second terminal of the capacitor, and another terminal of the second conduction path is connected to a second power supply rail.
Public/Granted literature
- US20110051304A1 DEFECTIVITY-IMMUNE TECHNIQUE OF IMPLEMENTING MIM-BASED DECOUPLING CAPACITORS Public/Granted day:2011-03-03
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